In Situ Observation of Low?Power Nano?Synaptic Response in Graphene Oxide Using Conductive Atomic Force Microscopy

Multiple studies have reported the observation of electro-synaptic response in different metal/insulator/metal devices. However, most them analyzed large (>1 µm2) devices that do not meet integration density required by industry (1010 devices/mm2). Some emploied a scanning tunneling microscope (STM) to explore nano-synaptic materials, but this setup there is nanogap between insulator and one metallic electrodes (i.e., STM tip), present real Here, it demonstrated how use conductive atomic force microscopy presence quality confined areas <50 nm2. Graphene oxide (GO) selected due its easy fabrication. Metal/GO/metal nano-synapses exhibit potentiation paired pulse facilitation with low write current levels <1 µA power consumption ?3 µW), controllable excitatory post-synaptic currents, long-term depression. The results provide new method plasticity at nanoscale, point GO as an important candidate for fabrication ultrasmall (<50 nm2) electronic synapses fulfilling requirements neuromorphic systems.